AP9410GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9410GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: SO-8

 Búsqueda de reemplazo de AP9410GM MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9410GM datasheet

 ..1. Size:70K  ape
ap9410gm.pdf pdf_icon

AP9410GM

AP9410GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 0.1. Size:58K  ape
ap9410gmt-hf.pdf pdf_icon

AP9410GM

AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80A G Low On-resistance S RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combina

 0.2. Size:96K  ape
ap9410gm-hf.pdf pdf_icon

AP9410GM

AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 6m D D Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-

 7.1. Size:229K  ape
ap9410gh.pdf pdf_icon

AP9410GM

AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP9410 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes

Otros transistores... AP9408AGP, AP9408CGM-HF, AP9408GH, AP9408GJ, AP9408GM-HF, AP9410AGH-HF, AP9410AGM-HF, AP9410GH-HF, IRFP250N, AP9410GMT-HF, AP9412AGH, AP9412AGI, AP9412AGM-HF, AP9412AGP, AP9412BGM-HF, AP9412CGM-HF, AP9412GH