AP9410GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9410GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 660 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
AP9410GM Datasheet (PDF)
ap9410gm.pdf

AP9410GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 30V DDLow On-resistance RDS(ON) 6m DDFast Switching ID 18A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
ap9410gmt-hf.pdf

AP9410GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive D BVDSS 30V Simple Drive Requirement RDS(ON) 5.5m SO-8 Compatible ID 80AG Low On-resistanceS RoHS Compliant & Halogen-FreeDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combina
ap9410gm-hf.pdf

AP9410GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 6mDD Fast Switching ID 18AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-
ap9410gh.pdf

AP9410GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP9410 series are from Advanced Power innovated design andGDsilicon process technology to achieve the lowes
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IMW65R027M1H | CSD16410Q5A
History: IMW65R027M1H | CSD16410Q5A



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