AP9412BGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9412BGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: SO-8

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AP9412BGM-HF datasheet

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 ap9412bgm-hf.pdf pdf_icon

AP9412BGM-HF

AP9412BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

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 ap9412bgm.pdf pdf_icon

AP9412BGM-HF

AP9412BGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 18A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

 8.1. Size:94K  ape
 ap9412agm-hf.pdf pdf_icon

AP9412BGM-HF

AP9412AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Ultra_Low On-resistance RDS(ON) 6m D D Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o

 8.2. Size:64K  ape
 ap9412gh ap9412gj.pdf pdf_icon

AP9412BGM-HF

AP9412GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 73A G S Description The Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast switching, ruggedized device design, low

MOSTRAR MÁS

Otros transistores... AP9410AGM-HF, AP9410GH-HF, AP9410GM, AP9410GMT-HF, AP9412AGH, AP9412AGI, AP9412AGM-HF, AP9412AGP, 2N7002, AP9412CGM-HF, AP9412GH, AP9412GI, AP9412GJ, AP9412GP, AP9414GM, AP9416GM, AP9418GM