AP9435GK-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9435GK-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.7 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT-223

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AP9435GK-HF datasheet

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 ap9435gk-hf.pdf pdf_icon

AP9435GK-HF

AP9435GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID -6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi

 6.1. Size:2952K  cn vbsemi
 ap9435gk.pdf pdf_icon

AP9435GK-HF

AP9435GK www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load

 7.1. Size:169K  ape
 ap9435gm-hf.pdf pdf_icon

AP9435GK-HF

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 7.2. Size:98K  ape
 ap9435gh ap9435gj.pdf pdf_icon

AP9435GK-HF

AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost-

MOSTRAR MÁS

Otros transistores... AP9430GH-HF, AP9430GYT-HF, AP9431GH-HF, AP9432GYT-HF, AP9434GM-HF, AP9435GG-HF, AP9435GH, AP9435GJ, NCEP15T14, AP9435GM-HF, AP9435GP, AP9440GYT-HF, AP9450GYT-HF, AP9451GG-HF, AP9452AGG-HF, AP9452GG-HF, AP9465AGH