AP9451GG-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9451GG-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: SOT-89

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AP9451GG-HF datasheet

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 ap9451gg-hf.pdf pdf_icon

AP9451GG-HF

AP9451GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg

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 ap9451gg.pdf pdf_icon

AP9451GG-HF

AP9451GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3A G RoHS Compliant & Halogen-Free S D Description AP9451 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.1. Size:91K  ape
 ap9450gyt-hf.pdf pdf_icon

AP9451GG-HF

AP9450GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 2.8m RoHS Compliant & Halogen-Free ID 50A G D S D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

 9.2. Size:93K  ape
 ap9452agg-hf.pdf pdf_icon

AP9451GG-HF

AP9452AGG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the S designer with the best combination of fast switching, D SOT-

MOSTRAR MÁS

Otros transistores... AP9435GG-HF, AP9435GH, AP9435GJ, AP9435GK-HF, AP9435GM-HF, AP9435GP, AP9440GYT-HF, AP9450GYT-HF, AO4407, AP9452AGG-HF, AP9452GG-HF, AP9465AGH, AP9465AGJ, AP9465BGH, AP9465BGJ, AP9465GEM, AP9466GH