AP9452AGG-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9452AGG-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.5 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: SOT-89

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AP9452AGG-HF datasheet

 ..1. Size:93K  ape
 ap9452agg-hf.pdf pdf_icon

AP9452AGG-HF

AP9452AGG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the S designer with the best combination of fast switching, D SOT-

 8.1. Size:164K  ape
 ap9452gg.pdf pdf_icon

AP9452AGG-HF

AP9452GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Simple Drive Requirement ID 4A G RoHS Compliant S Description AP9452 series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible on- res

 8.2. Size:90K  ape
 ap9452gg-hf.pdf pdf_icon

AP9452AGG-HF

AP9452GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower gate charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 50m Single Drive Requirement ID 4A G RoHS Compliant S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

 9.1. Size:59K  ape
 ap9451gg-hf.pdf pdf_icon

AP9452AGG-HF

AP9451GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg

MOSTRAR MÁS

Otros transistores... AP9435GH, AP9435GJ, AP9435GK-HF, AP9435GM-HF, AP9435GP, AP9440GYT-HF, AP9450GYT-HF, AP9451GG-HF, BS170, AP9452GG-HF, AP9465AGH, AP9465AGJ, AP9465BGH, AP9465BGJ, AP9465GEM, AP9466GH, AP9466GJ