AP9452GG-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9452GG-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOT-89

Búsqueda de reemplazo de MOSFET AP9452GG-HF

AP9452GG-HF Datasheet (PDF)

..1. Size:90K ape
ap9452gg-hf.pdf

AP9452GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower gate charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 50m Single Drive Requirement ID 4AG RoHS CompliantSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

6.1. Size:164K ape
ap9452gg.pdf

AP9452GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Simple Drive Requirement ID 4AG RoHS CompliantSDescriptionAP9452 series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible on-res

8.1. Size:93K ape
ap9452agg-hf.pdf

AP9452AGG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide theSdesigner with the best combination of fast switching,DSOT-

9.1. Size:59K ape
ap9451gg-hf.pdf

AP9451GG-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3AG RoHS Compliant & Halogen-Free SDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugg

9.2. Size:127K ape
ap9451gg.pdf

AP9451GG-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3AG RoHS Compliant & Halogen-Free SDDescriptionAP9451 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

9.3. Size:91K ape
ap9450gyt-hf.pdf

AP9450GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 2.8m RoHS Compliant & Halogen-Free ID 50AGDSDDDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi

9.4. Size:57K ape
ap9450gmt-hf.pdf

AP9450GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.1m Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeS DDDDescriptionDAP9450 series are from Advanced Power innovated design and siliconprocess technology to achieve

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