AP9476GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9476GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.4 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: SO-8

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AP9476GM-HF datasheet

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 ap9476gm-hf.pdf pdf_icon

AP9476GM-HF

AP9476GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

 6.1. Size:217K  ape
 ap9476gm.pdf pdf_icon

AP9476GM-HF

AP9476GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

 9.1. Size:94K  ape
 ap9475gm-hf.pdf pdf_icon

AP9476GM-HF

AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 9.2. Size:69K  ape
 ap9477gm.pdf pdf_icon

AP9476GM-HF

AP9477GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best co

MOSTRAR MÁS

Otros transistores... AP9468GP-HF, AP9468GS-HF, AP9469GH, AP9469GJ, AP9469GM, AP9470GM-HF, AP9474GM, AP9475GM-HF, IRF1405, AP9477GK-HF, AP9477GM-HF, AP9478GM, AP9479GM-HF, AP9487GM-HF, AP94T07GH-HF, AP94T07GJ-HF, AP94T07GMT-HF