AP9560GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9560GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 51 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 375 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: TO-220

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AP9560GP-HF datasheet

 ..1. Size:93K  ape
 ap9560gp-hf.pdf pdf_icon

AP9560GP-HF

AP9560GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO

 7.1. Size:92K  ape
 ap9560gh-hf.pdf pdf_icon

AP9560GP-HF

AP9560GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID -52A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-

 7.2. Size:59K  ape
 ap9560gs-hf.pdf pdf_icon

AP9560GP-HF

AP9560GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.5m Fast Switching Characteristic ID -51A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 9.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9560GP-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

MOSTRAR MÁS

Otros transistores... AP94T07GH-HF, AP94T07GJ-HF, AP94T07GMT-HF, AP94T07GP1-HF, AP94T07GP-HF, AP94T07GS-HF, AP9510GM, AP9560GH-HF, AO4407A, AP9560GS-HF, AP9561AGH-HF, AP9561AGI-HF, AP9561AGJ-HF, AP9561AGM-HF, AP9561GH-HF, AP9561GI-HF, AP9561GJ-HF