AP9561AGJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9561AGJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO-251

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AP9561AGJ-HF datasheet

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ap9561agj-hf.pdf pdf_icon

AP9561AGJ-HF

AP9561AGJ-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39A G RoHS Compliant & Halogen-Free S Description AP9561A series are from Advanced Power innovated design and silicon G D TO-251(J) S process technology t

 6.1. Size:57K  ape
ap9561agi-hf.pdf pdf_icon

AP9561AGJ-HF

AP9561AGI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -30A G RoHS Compliant & Halogen-Free S Description AP9561A series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 6.2. Size:56K  ape
ap9561agm-hf.pdf pdf_icon

AP9561AGJ-HF

AP9561AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D D Low On-resistance RDS(ON) 18m Fast Switching Characteristic ID -9.2A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP9561A series are from Advanced Power innovated design and silicon process technol

 6.3. Size:57K  ape
ap9561agh-hf.pdf pdf_icon

AP9561AGJ-HF

AP9561AGH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 18m Fast Switching Characteristic ID -39A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, rugge

Otros transistores... AP94T07GP-HF, AP94T07GS-HF, AP9510GM, AP9560GH-HF, AP9560GP-HF, AP9560GS-HF, AP9561AGH-HF, AP9561AGI-HF, IRF730, AP9561AGM-HF, AP9561GH-HF, AP9561GI-HF, AP9561GJ-HF, AP9561GM, AP9561GP-HF, AP9562GP-HF, AP9563GH-HF