AP9561GJ-HF Todos los transistores

 

AP9561GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9561GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-251
 

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AP9561GJ-HF Datasheet (PDF)

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ap9561gh-hf ap9561gj-hf.pdf pdf_icon

AP9561GJ-HF

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

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ap9561gj.pdf pdf_icon

AP9561GJ-HF

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 7.1. Size:93K  ape
ap9561gp-hf.pdf pdf_icon

AP9561GJ-HF

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 7.2. Size:93K  ape
ap9561gm-hf.pdf pdf_icon

AP9561GJ-HF

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

Otros transistores... AP9560GP-HF , AP9560GS-HF , AP9561AGH-HF , AP9561AGI-HF , AP9561AGJ-HF , AP9561AGM-HF , AP9561GH-HF , AP9561GI-HF , IRF840 , AP9561GM , AP9561GP-HF , AP9562GP-HF , AP9563GH-HF , AP9563GJ-HF , AP9563GK , AP9563GM-HF , AP9564GM .

History: FQT1N60CTFWS | IXFX73N30Q | FQPF7N10 | CS2N50DP | AP10TN040P

 

 
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