AP9562GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9562GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO-220

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AP9562GP-HF datasheet

 ..1. Size:93K  ape
 ap9562gp-hf.pdf pdf_icon

AP9562GP-HF

AP9562GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -27A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des

 9.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9562GP-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

 9.2. Size:93K  ape
 ap9566gm-hf.pdf pdf_icon

AP9562GP-HF

AP9566GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 72m D Fast Switching Characteristic ID -4.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 9.3. Size:235K  ape
 ap9563gh.pdf pdf_icon

AP9562GP-HF

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

MOSTRAR MÁS

Otros transistores... AP9561AGI-HF, AP9561AGJ-HF, AP9561AGM-HF, AP9561GH-HF, AP9561GI-HF, AP9561GJ-HF, AP9561GM, AP9561GP-HF, IRF540, AP9563GH-HF, AP9563GJ-HF, AP9563GK, AP9563GM-HF, AP9564GM, 2SK4057, 2SK3296, 2SK3296-S