AP9565AGH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9565AGH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: TO-252

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AP9565AGH datasheet

 ..1. Size:97K  ape
ap9565agh ap9565agj.pdf pdf_icon

AP9565AGH

AP9565AGH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5A G S Description G Advanced Power MOSFETs from APEC provide the D S designer with the best combination of fast switching, TO-252(H) ruggedized device de

 0.1. Size:98K  ape
ap9565agh-hf ap9565agj-hf.pdf pdf_icon

AP9565AGH

AP9565AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 42m Fast Switching Characteristic ID -18.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switchi

 8.1. Size:89K  ape
ap9565gem.pdf pdf_icon

AP9565AGH

AP9565GEM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Fast Switching Characteristic RDS(ON) 38m D RoHS Compliant ID -6.5A G S S S SO-8 D Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de

 8.2. Size:96K  ape
ap9565bgh-hf ap9565bgj-hf.pdf pdf_icon

AP9565AGH

AP9565BGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -40V Simple Drive Requirement RDS(ON) 52m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S best combination of fast switching,

Otros transistores... AP9563GK, AP9563GM-HF, AP9564GM, 2SK4057, 2SK3296, 2SK3296-S, 2SK3296-ZK, 2SK3296-ZJ, IRFB4227, AP9565AGJ, AP9565BGH-HF, AP9565BGJ-HF, AP9565BGM-HF, AP9565GEH, AP9565GEJ, AP9565GEM, AP9566GH