AP9575AGH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9575AGH-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm

Encapsulados: TO-252

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AP9575AGH-HF datasheet

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 ap9575agh-hf ap9575agj-hf.pdf pdf_icon

AP9575AGH-HF

AP9575AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Higher Gate-Source Voltage D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description G AP9575A series are from Advanced Power innovated design and silicon D TO-252(H) S process te

 5.1. Size:99K  ape
 ap9575agh j-hf.pdf pdf_icon

AP9575AGH-HF

AP9575AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Higher Gate-Source Voltage BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for commercial-industrial D TO-252(H) S surface mou

 6.1. Size:94K  ape
 ap9575ags-hf.pdf pdf_icon

AP9575AGH-HF

AP9575AGS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D r

 6.2. Size:93K  ape
 ap9575agm-hf.pdf pdf_icon

AP9575AGH-HF

AP9575AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -60V D D D Simple Drive Requirement RDS(ON) 64m D Fast Switching Characteristic ID -4.6A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

MOSTRAR MÁS

Otros transistores... AP9571GS-HF, AP9573GH-HF, 2SK2333, 2SK2632LS, 2SK1413, 2SK1936-01, 2SK2640-01MR, 2SK2771-01R, K4145, AP9575AGI-HF, AP9575AGJ-HF, AP9575AGM-HF, AP9575AGS-HF, AP9575GH-HF, AP9575GI-HF, AP9575GJ-HF, AP9575GM