AP9585GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9585GM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: SO-8

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AP9585GM Datasheet (PDF)

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ap9585gm.pdf

AP9585GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -80VDDD Lower Gate Charge RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device

0.1. Size:95K ape
ap9585gm-hf.pdf

AP9585GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -80VDDD Lower Gate Charge RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination o

7.1. Size:102K ape
ap9585gh ap9585gj.pdf

AP9585GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -80V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -11.2AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount applications and suited for low volta

9.1. Size:93K ape
ap9581gs-hf.pdf

AP9581GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -80V Simple Drive Requirement RDS(ON) 15m Fast Switching Characteristic ID -95AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

9.2. Size:207K ape
ap9581gs.pdf

AP9581GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -80V Simple Drive Requirement RDS(ON) 15m Fast Switching Characteristic ID3 -95AG Halogen Free & RoHS Compliant ProductSDescriptionAP9581 series are from Advanced Power innovated designand silicon process technology to achieve the

9.3. Size:96K ape
ap9581gp-hf.pdf

AP9581GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -80V Simple Drive Requirement RDS(ON) 15m Fast Switching Characteristic ID -95AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ru

9.4. Size:145K ape
ap9581gp.pdf

AP9581GP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -80V Simple Drive Requirement RDS(ON) 15m Fast Switching Characteristic ID -95AG Halogen Free & RoHS Compliant ProductSDescriptionAP9581 series are from Advanced Power in

9.5. Size:102K ape
ap9587gh j-hf.pdf

AP9587GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -80V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID -6.1AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchin

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