AP95T07BGS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP95T07BGS-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 138.9 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 125 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 96 nC
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 700 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET AP95T07BGS-HF
AP95T07BGS-HF Datasheet (PDF)
ap95t07bgs-hf.pdf
AP95T07BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresis
ap95t07bgp-hf.pdf
AP95T07BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m RoHS Compliant & Halogen-Free ID 125AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap95t07bgp.pdf
AP95T07BGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 75V Simple Drive Requirement RDS(ON) 5m Lower On-resistance RoHS Compliant & Halogen-Free ID 125AGSDescriptionAP95T07B series are from Advanced Power innovated designand silicon process technology to ac
ap95t07agp.pdf
AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID3 170AGSDescriptionAP95T07A series are from Advanced Power innovated designand silicon process technology to achieve the lowest possibleon-resistance and f
ap95t07gs.pdf
AP95T07GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GDS TO-263(S)ruggedized device design,
ap95t07gp-hf.pdf
AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedize
ap95t07gp.pdf
AP95T07GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP95T07 series are from Advanced Power innovated designand silicon process technology to achieve the lowest
ap95t07agp-hf.pdf
AP95T07AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.8m RoHS Compliant & Halogen-Free ID 170AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi
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