AP95T10AGW-HF Todos los transistores

 

AP95T10AGW-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP95T10AGW-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 277.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 830 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-3P
 

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AP95T10AGW-HF Datasheet (PDF)

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AP95T10AGW-HF

AP95T10AGW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fa

 5.1. Size:93K  ape
ap95t10agi-hf.pdf pdf_icon

AP95T10AGW-HF

AP95T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 58AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

 5.2. Size:150K  ape
ap95t10agp.pdf pdf_icon

AP95T10AGW-HF

AP95T10AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated designand silicon process technology to ach

 5.3. Size:60K  ape
ap95t10agp-hf.pdf pdf_icon

AP95T10AGW-HF

AP95T10AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan

Otros transistores... AP95T07AGP-HF , AP95T07BGP-HF , AP95T07BGS-HF , AP95T07GP-HF , AP95T07GS , AP95T08GP , AP95T10AGI-HF , AP95T10AGP-HF , IRF9640 , AP95T10GI-HF , AP95T10GP-HF , AP95T10GW-HF , AP95T11GI-HF , AP95U03GMT-HF , AP9620AGM-HF , AP9620GM-HF , AP96T07GP-HF .

History: NCEP020N30QU | GSM2912 | 2SK2849L

 

 
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