AP95T10AGW-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP95T10AGW-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 277.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 830 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-3P

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AP95T10AGW-HF Datasheet (PDF)

..1. Size:55K ape
ap95t10agw-hf.pdf

AP95T10AGW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fa

5.1. Size:93K ape
ap95t10agi-hf.pdf

AP95T10AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 58AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

5.2. Size:150K ape
ap95t10agp.pdf

AP95T10AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAP95T10A series are from Advanced Power innovated designand silicon process technology to ach

5.3. Size:60K ape
ap95t10agp-hf.pdf

AP95T10AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 150AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan

5.4. Size:48K ape
ap95t10agr-hf.pdf

AP95T10AGR-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 6m RoHS Compliant & Halogen-Free ID 145AGSDescriptionAP95T10A series are from Advanced Power innovated design andsilicon process technology to ach

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