AP96T07GS-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP96T07GS-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 175 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-263

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AP96T07GS-HF datasheet

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 ap96t07gs-hf.pdf pdf_icon

AP96T07GS-HF

AP96T07GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 75V Lower On-resistance RDS(ON) 4.5m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S

 6.1. Size:94K  ape
 ap96t07gp-hf.pdf pdf_icon

AP96T07GS-HF

AP96T07GP-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 7.1. Size:56K  ape
 ap96t07agp-hf.pdf pdf_icon

AP96T07GS-HF

AP96T07AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 75V Lower On-resistance RDS(ON) 4.25m Fast Switching Characteristic ID 170A G RoHS Compliant & Halogen-Free S Description AP96T07A series are from Advanced Power innovated design and silicon process technology to achieve the

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