AP9922AGEO-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9922AGEO-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TSSOP-8

Búsqueda de reemplazo de MOSFET AP9922AGEO-HF

AP9922AGEO-HF Datasheet (PDF)

..1. Size:57K ape
ap9922ageo-hf.pdf

AP9922AGEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 18mG1S1 Optimal DC/DC Battery Application S1 ID 6ATSSOP-8D1 Halogen Free & RoHS Compliant ProductDescriptionD1 D2AP9922A series are from Advanced Power innovated des

8.1. Size:96K ape
ap9922geo-hf.pdf

AP9922GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 16mG1S1 Optimal DC/DC Battery Application S1 ID 6.4ATSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner wi

8.2. Size:144K ape
ap9922geo.pdf

AP9922GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance BVDSS 20VS2S2D2 Capable of 1.8V Gate Drive RDS(ON) 16mG1S1S1 Optimal DC/DC Battery Application ID 6.4ATSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner wi

9.1. Size:60K ape
ap9926gm-hf.pdf

AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te

9.2. Size:71K ape
ap9928geo.pdf

AP9928GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 23m G1S1Optimal DC/DC battery application S1 ID 5A TSSOP-8D1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G

9.3. Size:143K ape
ap9923geo.pdf

AP9923GEO-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low On-Resistance BVDSS -12VS2S2D2 Small & Thin Package RDS(ON) 25mG1 Capable of 1.8V Gate Drive ID -7AS1S1TSSOP-8D1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide thedesigner with the best c

9.4. Size:80K ape
ap9926go.pdf

AP9926GOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Low drive current S1 ID 4.6A TSSOP-8D1Surface mount package DescriptionD2The Advanced Power MOSFETs fr

9.5. Size:95K ape
ap9924ago-hf.pdf

AP9924AGO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 22m Halogen Free & RoHS Compliant Product ID 5AG2S2S2DDescriptionG1S1S1TSSOP-8DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

9.6. Size:60K ape
ap9926geo-hf.pdf

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1

9.7. Size:92K ape
ap9924go.pdf

AP9924GORoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2 Low on-resistance S2 BVDSS 20VS2D Capable of 2.5V gate drive RDS(ON) 20mG1S1S1 RoHS Compliant ID 6.8ATSSOP-8DDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, G2G1ruggedized devic

9.8. Size:106K ape
ap9920geo.pdf

AP9920GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 30V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Optimal DC/DC battery application S1 ID 4.9A TSSOP-8D1 RoHS compliantDescriptionThe Advanced Power MOSFE

9.9. Size:167K ape
ap9926gm.pdf

AP9926GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series ar

9.10. Size:72K ape
ap9928gem.pdf

AP9928GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow on-resistance BVDSS 20V D2D2D1Capable of 2.5V gate drive RDS(ON) 23m D1Surface mount package ID 7.3A G2S2G1SO-8S1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G2designer

9.11. Size:87K ape
ap9926gem.pdf

AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw

9.12. Size:144K ape
ap9926geo.pdf