AP9926GEM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9926GEM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de AP9926GEM MOSFET
AP9926GEM Datasheet (PDF)
ap9926gem.pdf

AP9926GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VD2D2 Capable of 2.5V gate drive D1 RDS(ON) 30mD1 Low drive current ID 6AG2S2 Surface mount packageG1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide the D1 D2designer with the best combination of fast sw
ap9926geo-hf.pdf

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
ap9926geo.pdf

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
ap9926gm-hf.pdf

AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te
Otros transistores... AP98T07GP-HF , AP9918GJ , AP9920GEO , AP9922AGEO-HF , AP9922GEO-HF , AP9923GEO-HF , AP9924AGO-HF , AP9924GO , IRFP250N , AP9926GEO-HF , AP9926GM-HF , AP9926GO , AP9928GEM , AP9928GEO , AP9930AGM , AP9930GM-HF , AP9932GM .
History: IXKH24N60C5 | IPB45N06S4-09 | DMP2039UFDE | AP2C016LMT | APT5570AN | IPB009N03LG | AM7463P
History: IXKH24N60C5 | IPB45N06S4-09 | DMP2039UFDE | AP2C016LMT | APT5570AN | IPB009N03LG | AM7463P



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