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AP9928GEO MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9928GEO

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 245 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TSSOP-8

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AP9928GEO Datasheet (PDF)

1.1. ap9928geo.pdf Size:71K _a-power

AP9928GEO
AP9928GEO

AP9928GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ЎLow on-resistance BVDSS 20V Ў Ў Ў S2 S2 D2 ЎCapable of 2.5V gate drive RDS(ON) 23m? Ў Ў Ў G1 S1 ЎOptimal DC/DC battery application S1 ID 5A Ў Ў Ў TSSOP-8 D1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G2 designer with

2.1. ap9928gem.pdf Size:72K _a-power

AP9928GEO
AP9928GEO

AP9928GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎLow on-resistance BVDSS 20V Ў Ў Ў D2 D2 D1 ЎCapable of 2.5V gate drive RDS(ON) 23m? Ў Ў Ў D1 ЎSurface mount package ID 7.3A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the G1 G2 designer with the best co

5.1. ap9920geo.pdf Size:106K _a-power

AP9928GEO
AP9928GEO

AP9920GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ЎLow on-resistance BVDSS 30V Ў Ў Ў S2 S2 D2 ЎCapable of 2.5V gate drive RDS(ON) 28m? Ў Ў Ў G1 S1 ЎOptimal DC/DC battery application S1 ID 4.9A Ў Ў Ў TSSOP-8 D1 Ў RoHS compliant Ў Ў Ў Description The Advanced Power MOSFETs from APEC provide

5.2. ap9926gm.pdf Size:167K _a-power

AP9928GEO
AP9928GEO

AP9926GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge BVDSS 20V ▼ ▼ ▼ D2 D2 D1 ▼ Capable of 2.5V Gate Drive RDS(ON) 30mΩ ▼ ▼ ▼ D1 ▼ Surface Mount Package ID 6A ▼ ▼ ▼ G2 S2 ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ G1 S1 SO-8 Description D2 D1 AP9926 series ar

5.3. ap9926go.pdf Size:80K _a-power

AP9928GEO
AP9928GEO

AP9926GO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ЎLow on-resistance BVDSS 20V Ў Ў Ў S2 S2 D2 ЎCapable of 2.5V gate drive RDS(ON) 28m? Ў Ў Ў G1 S1 ЎLow drive current S1 ID 4.6A Ў Ў Ў TSSOP-8 D1 ЎSurface mount package Ў Ў Ў Description D2 The Advanced Power MOSFETs from APEC provide the

5.4. ap9922ageo-hf.pdf Size:57K _a-power

AP9928GEO
AP9928GEO

AP9922AGEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Ў Low On-resistance BVDSS 20V S2 S2 D2 Ў Capable of 1.8V Gate Drive RDS(ON) 18m? G1 S1 Ў Optimal DC/DC Battery Application S1 ID 6A TSSOP-8 D1 Ў Halogen Free & RoHS Compliant Product Description D1 D2 AP9922A series are from Advanced Power innovated design G1

5.5. ap9926gm-hf.pdf Size:60K _a-power

AP9928GEO
AP9928GEO

AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low Gate Charge BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 30m? D1 Ў Surface Mount Package ID 6A G2 S2 Ў RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process technology

5.6. ap9926gem.pdf Size:87K _a-power

AP9928GEO
AP9928GEO

AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low on-resistance BVDSS 20V D2 D2 Ў Capable of 2.5V gate drive D1 RDS(ON) 30m? D1 Ў Low drive current ID 6A G2 S2 Ў Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast switching,

5.7. ap9926geo.pdf Size:144K _a-power

AP9928GEO
AP9928GEO

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 ▼ Low On-resistance BVDSS 20V S2 S2 D2 ▼ Capable of 2.5V Gate Drive RDS(ON) 28mΩ G1 S1 ▼ Low Drive Current S1 ID 4.6A TSSOP-8 D1 ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

5.8. ap9923geo.pdf Size:143K _a-power

AP9928GEO
AP9928GEO

AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ▼ Low On-Resistance BVDSS -12V S2 S2 D2 ▼ Small & Thin Package RDS(ON) 25mΩ G1 ▼ Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 ▼ RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best c

5.9. ap9922geo-hf.pdf Size:96K _a-power

AP9928GEO
AP9928GEO

AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Ў Low on-resistance BVDSS 20V S2 S2 D2 Ў Capable of 1.8V Gate Drive RDS(ON) 16m? G1 S1 Ў Optimal DC/DC Battery Application S1 ID 6.4A TSSOP-8 D1 Ў RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the be

5.10. ap9924ago-hf.pdf Size:95K _a-power

AP9928GEO
AP9928GEO

AP9924AGO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low on-resistance BVDSS 20V Ў Capable of 2.5V gate drive RDS(ON) 22m? Ў Halogen Free & RoHS Compliant Product ID 5A G2 S2 S2 D Description G1 S1 S1 TSSOP-8 D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

5.11. ap9922geo.pdf Size:144K _a-power

AP9928GEO
AP9928GEO

AP9922GEO-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 ▼ Low on-resistance BVDSS 20V S2 S2 D2 ▼ Capable of 1.8V Gate Drive RDS(ON) 16mΩ G1 S1 S1 ▼ Optimal DC/DC Battery Application ID 6.4A TSSOP-8 D1 ▼ RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer wi

5.12. ap9926geo-hf.pdf Size:60K _a-power

AP9928GEO
AP9928GEO

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Ў Low On-resistance BVDSS 20V S2 S2 D2 Ў Capable of 2.5V Gate Drive RDS(ON) 28m? G1 S1 Ў Low Drive Current S1 ID 4.6A TSSOP-8 D1 Ў Surface Mount Package Ў RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1 G2 desig

5.13. ap9924go.pdf Size:92K _a-power

AP9928GEO
AP9928GEO

AP9924GO RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Ў Low on-resistance S2 BVDSS 20V S2 D Ў Capable of 2.5V gate drive RDS(ON) 20m? G1 S1 S1 Ў RoHS Compliant ID 6.8A TSSOP-8 D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device desig

5.14. ap9923geo-hf.pdf Size:96K _a-power

AP9928GEO
AP9928GEO

AP9923GEO-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Ў Low On-Resistance BVDSS -12V S2 S2 D2 Ў Small & Thin Package RDS(ON) 25m? G1 Ў Capable of 1.8V Gate Drive ID -7A S1 S1 TSSOP-8 D1 Ў RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best combinati

Otros transistores... AP9923GEO-HF , AP9924AGO-HF , AP9924GO , AP9926GEM , AP9926GEO-HF , AP9926GM-HF , AP9926GO , AP9928GEM , IRF730 , AP9930AGM , AP9930GM-HF , AP9932GM , AP9934GM , AP9936GM-HF , AP9938AGEY-HF , AP9938GEM-HF , AP9938GEO-HF .

 


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