AP9930GM-HF Todos los transistores

 

AP9930GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9930GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5(4.1) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 10(7.7) nS
   Cossⓘ - Capacitancia de salida: 229.8(80) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033(0.055) Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET AP9930GM-HF

 

AP9930GM-HF Datasheet (PDF)

 ..1. Size:86K  ape
ap9930gm-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9930GM-HFHalogen-Free ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive RequirementP2G Low On-resistance N-CH BVDSS 30VN2D/P2D Full Bridge Application on RDS(ON) 33mP1S/P2SP1GLCD Monitor Inverter ID 5.5AN2GN1S/N2S RoHS Compliant P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 55mDescription ID -4.1A

 8.1. Size:120K  ape
ap9930agm.pdf

AP9930GM-HF
AP9930GM-HF

AP9930AGMRoHS-compliant ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive RequirementP2G Low On-resistance N-CH BVDSS 30VN2D/P2D Full Bridge Application on RDS(ON) 35mP1S/P2SP1GLCD Monitor Inverter ID 5.2AN2GN1S/N2S RoHS Compliant P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 72mDescription ID -3.5A

 9.1. Size:73K  ape
ap9938gem-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr

 9.2. Size:203K  ape
ap9936gm-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9936GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET DC-DC Application BVDSS 30VD2D2D1 Dual N-channel Device RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 9.3. Size:177K  ape
ap9938gey.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

 9.4. Size:96K  ape
ap9932gm.pdf

AP9930GM-HF
AP9930GM-HF

AP9932GMPb Free Plating ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETP2GSimple Drive Requirement N-CH BVDSS 30V N2D/P2DLow On-resistance RDS(ON) 40m P1S/P2SP1GFull Bridge Application on ID 4.3A N2GN1S/N2SLCD Monitor Inverter P-CH BVDSS -30VN1D/P1DN1GSO-8RDS(ON) 7

 9.5. Size:168K  ape
ap9936gm.pdf

AP9930GM-HF
AP9930GM-HF

AP9936GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET DC-DC Application BVDSS 30VD2D2D1 Dual N-channel Device RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionD2D1AP9936 series are

 9.6. Size:144K  ape
ap9938geo.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

 9.7. Size:96K  ape
ap9934gm.pdf

AP9930GM-HF
AP9930GM-HF

AP9934GMPb Free Plating ProductAdvanced Power 2N AND 2P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETP2GSimple Drive Requirement N-CH BVDSS 35V N2D/P2DLow On-resistance RDS(ON) 48m P1S/P2SP1GFull Bridge Application on ID 4.3A N2G N1S/N2SLCD Monitor Inverter P-CH BVDSS -35VN1D/P1DN1GSO-8RDS(ON) 72

 9.8. Size:98K  ape
ap9938agey-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achieve

 9.9. Size:71K  ape
ap9938geyt-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEYT-HFHalogen-Free ProductAdvanced Power DUAL N CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1/D2 Capable of 1.8V Gate Drive BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 10AS1 RoHS Compliant & Halogen-FreeG1S2D1/D2G2Description PMPAK 3x3G1 G2AP9938 series are from Advanced Power innovated design and

 9.10. Size:97K  ape
ap9938gey-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

 9.11. Size:170K  ape
ap9938gem.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series a

 9.12. Size:178K  ape
ap9938agey.pdf

AP9930GM-HF
AP9930GM-HF

AP9938AGEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Low On-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2AP9938A series are from Advanced Power innovated designG1 G2and silicon proce

 9.13. Size:73K  ape
ap9938geo-hf.pdf

AP9930GM-HF
AP9930GM-HF

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

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History: 2SK2900-01

 

 
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History: 2SK2900-01

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