AP9960GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9960GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de AP9960GJ MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9960GJ datasheet

 ..1. Size:71K  ape
 ap9960gh ap9960gj.pdf pdf_icon

AP9960GJ

AP9960GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Low Gate Charge RDS(ON) 16m Fast Switching ID 42A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rug

 0.1. Size:97K  ape
 ap9960gh-hf ap9960gj-hf.pdf pdf_icon

AP9960GJ

AP9960GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Low Gate Charge RDS(ON) 16m Fast Switching Characteristic ID 42A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d

 7.1. Size:69K  ape
 ap9960gm-hf.pdf pdf_icon

AP9960GJ

AP9960GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D2 BVDSS 40V D2 D1 Fast Switching Speed RDS(ON) 20m D1 Surface Mount Package ID 7.8A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 7.2. Size:180K  ape
 ap9960gm.pdf pdf_icon

AP9960GJ

AP9960GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance D2 BVDSS 40V D2 D1 Fast Switching Speed RDS(ON) 20m D1 Surface Mount Package ID 7.8A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description D2 AP9960 series are from

MOSTRAR MÁS

Otros transistores... AP9938GEO-HF, AP9950AGH-HF, AP9950AGP-HF, AP9950GP, AP9952GP-HF, AP9960AGM-HF, AP9960GD, AP9960GH, K4145, AP9960GM-HF, AP9962AGD, AP9962AGH, AP9962AGJ-HF, AP9962AGM-HF, AP9962AGP-HF, AP9962BGH-HF, AP9962GH