AP9962AGD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9962AGD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 92 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: PDIP-8

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AP9962AGD Datasheet (PDF)

..1. Size:163K ape
ap9962agd.pdf

AP9962AGDRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2D1 Single Drive Requirement RDS(ON) 25mD1 PDIP-8 Package ID 7AG2S2G1PDIP-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi

6.1. Size:204K ape
ap9962agm-hf.pdf

AP9962AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2D1 Single Drive Requirement RDS(ON) 25mD1 Surface Mount Package ID 7AG2S2 RoHS CompliantG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switchin

6.2. Size:95K ape
ap9962agp-hf.pdf

AP9962AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

6.3. Size:97K ape
ap9962agh-hf ap9962agj-hf ap9962agj-hf.pdf

AP9962AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized

6.4. Size:142K ape
ap9962agh.pdf

AP9962AGHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resistance and

6.5. Size:167K ape
ap9962agm.pdf

AP9962AGM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 40VD2D2D1 Simple Drive Requirement RDS(ON) 25mD1 Surface Mount Package ID 7AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9962A series are fro

6.6. Size:151K ape
ap9962agp.pdf

AP9962AGP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Lower Gate Charge BVDSS 40V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 32AG RoHS Compliant & Halogen-FreeSDescriptionAP9962A series are from Advanced Power innovated

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