AP9962GM-HF Todos los transistores

 

AP9962GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9962GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO-8
 

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AP9962GM-HF Datasheet (PDF)

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 ap9962gm-hf.pdf pdf_icon

AP9962GM-HF

AP9962GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2 RoHS CompliantS2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching

 6.1. Size:89K  ape
 ap9962gma.pdf pdf_icon

AP9962GM-HF

AP9962GMAPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20mD Fast Switching Speed ID 36A RoHS CompliantGSDDescriptionThe APAK-5 package is preferred for all commercial-industrialSsurface mount applications and suited for low

 6.2. Size:205K  ape
 ap9962gm.pdf pdf_icon

AP9962GM-HF

AP9962GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide theD1designer with the best combination of fast switching,ruggedized device

 7.1. Size:98K  ape
 ap9962gh ap9962gj.pdf pdf_icon

AP9962GM-HF

AP9962GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resistance an

MOSTRAR MÁS

Otros transistores... AP9962AGH , AP9962AGJ-HF , AP9962AGM-HF , AP9962AGP-HF , AP9962BGH-HF , AP9962GH , AP9962GJ , AP9962GMA , IRFP250 , AP9963AGP-HF , AP9963AGS-HF , AP9963GI-HF , AP9963GP-HF , AP9963GS-HF , AP9964GM , AP9965GEH , AP9965GEJ .

History: BUK7Y3R5-40E | NCEP0212F | 2SK2838B | APM4052DU4 | GSM3406S

 

 
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