AP9965GYT-HF Todos los transistores

 

AP9965GYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9965GYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: PMPAK3X3
     - Selección de transistores por parámetros

 

AP9965GYT-HF Datasheet (PDF)

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AP9965GYT-HF

AP9965GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD Small Size & Lower Profile RDS(ON) 21mG RoHS Compliant & Halogen-Free ID 10ASDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design

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ap9965gem.pdf pdf_icon

AP9965GYT-HF

AP9965GEMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VD2D2 Simple Drive Requirement RDS(ON) 28mD1D1 Dual N MOSFET Package ID 6.7AG2 RoHS CompliantS2G1SO-8S1DescriptionD1 D2The Advanced Power MOSFETs from APEC provide theG1 G2designer with the best combination of f

 7.2. Size:134K  ape
ap9965geh ap9965gej.pdf pdf_icon

AP9965GYT-HF

AP9965GEH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 40VD Simple Drive Requirement G RDS(ON) 28m Fast Switching Characteristic ID 27ASDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device de

 9.1. Size:95K  ape
ap9963gp-hf.pdf pdf_icon

AP9965GYT-HF

AP9963GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 40V Low Gate Charge RDS(ON) 4m Fast Switching Characteristic ID 160AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

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