AP9966GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9966GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0168 Ohm

Encapsulados: SO-8

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AP9966GM-HF datasheet

 ..1. Size:93K  ape
 ap9966gm-hf.pdf pdf_icon

AP9966GM-HF

AP9966GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 40V D2 D2 D1 Simple Drive Requirement RDS(ON) 16.8m D1 RoHS Compliant & Halogen-Free ID 8.3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching,

 9.1. Size:95K  ape
 ap9963gp-hf.pdf pdf_icon

AP9966GM-HF

AP9963GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 40V Low Gate Charge RDS(ON) 4m Fast Switching Characteristic ID 160A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 9.2. Size:57K  ape
 ap9967gh-hf.pdf pdf_icon

AP9966GM-HF

AP9967GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 33A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 9.3. Size:204K  ape
 ap9962agm-hf.pdf pdf_icon

AP9966GM-HF

AP9962AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 D1 Single Drive Requirement RDS(ON) 25m D1 Surface Mount Package ID 7A G2 S2 RoHS Compliant G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchin

MOSTRAR MÁS

Otros transistores... AP9963GI-HF, AP9963GP-HF, AP9963GS-HF, AP9964GM, AP9965GEH, AP9965GEJ, AP9965GEM, AP9965GYT-HF, 5N60, AP9967GH-HF, AP9970AGP-HF, AP9970GI-HF, AP9970GK-HF, AP9970GP-HF, AP9970GW-HF, AP9971AGD, AP9971AGH