AP9970GI-HF Todos los transistores

 

AP9970GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9970GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 240 nS
   Cossⓘ - Capacitancia de salida: 1320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO-220CFM
 

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AP9970GI-HF Datasheet (PDF)

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AP9970GI-HF

AP9970GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and fa

 7.1. Size:94K  ape
ap9970gp-hf.pdf pdf_icon

AP9970GI-HF

AP9970GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

 7.2. Size:136K  ape
ap9970gk.pdf pdf_icon

AP9970GI-HF

AP9970GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 50mS Fast Switching Characteristic ID 5.8AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switch

 7.3. Size:93K  ape
ap9970gw-hf.pdf pdf_icon

AP9970GI-HF

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

Otros transistores... AP9964GM , AP9965GEH , AP9965GEJ , AP9965GEM , AP9965GYT-HF , AP9966GM-HF , AP9967GH-HF , AP9970AGP-HF , 7N60 , AP9970GK-HF , AP9970GP-HF , AP9970GW-HF , AP9971AGD , AP9971AGH , AP9971AGJ , AP9971AGM-HF , AP9971AGP .

History: RQ3E100MN | CS7N65A3TDY | 2SK578 | APT6017B2LLG | 2SJ302-Z | SH8K13 | NCEP60T18D

 

 
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