AP9970GP-HF Todos los transistores

 

AP9970GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9970GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 375 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 100 nC
   Tiempo de subida (tr): 200 nS
   Conductancia de drenaje-sustrato (Cd): 1280 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0032 Ohm
   Paquete / Cubierta: TO-220

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AP9970GP-HF Datasheet (PDF)

 ..1. Size:94K  ape
ap9970gp-hf.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

 7.1. Size:92K  ape
ap9970gi-hf.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 100AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and fa

 7.2. Size:136K  ape
ap9970gk.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 50mS Fast Switching Characteristic ID 5.8AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switch

 7.3. Size:93K  ape
ap9970gw-hf.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID 240AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc

 7.4. Size:58K  ape
ap9970gk-hf.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 50mS Fast Switching Characteristic ID 5.8AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switch

 7.5. Size:211K  ape
ap9970gw.pdf

AP9970GP-HF
AP9970GP-HF

AP9970GW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.2m RoHS Compliant & Halogen-Free ID3 240AGSDescriptionAP9970 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance and fast

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