AP9971AGJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9971AGJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET AP9971AGJ
AP9971AGJ Datasheet (PDF)
ap9971agh ap9971agj.pdf
AP9971AGH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer withDS TO-252(H)the best combination of fast switching, ruggedized device desig
ap9971agh-hf ap9971agj-hf.pdf
AP9971AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDSbest combination of fast switchin
ap9971agp ap9971ags.pdf
AP9971AGS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)Druggedized device design
ap9971agd.pdf
AP9971AGDRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low On-resistance BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 50mD1 PDIP-8 Package ID 5AG2S2PDIP-8G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,
ap9971agm-hf.pdf
AP9971AGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Single Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combinat
ap9971ags-hf.pdf
AP9971AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggediz
ap9971agm.pdf
AP9971AGM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2D2D1 Simple Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-Free G1S1SO-8DescriptionAP9971A series are from A
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918