AP9971GS-HF Todos los transistores

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 ap9971gs.pdf

AP9971GS Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 36m RoHS Compliant & Halogen-Free ID 25A G G S S Description AP4604 series are from Advanced Power innovated design AP9971 series are from Advanced Power innovated design and and silicon process tec

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 ap9971gs p-hf.pdf

AP9971GS/P-HF RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low

 7.1. Size:169K  ape
 ap9971gm.pdf

AP9971GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 D2 D1 Description AP9971 series are

 7.2. Size:153K  ape
 ap9971gi-hf.pdf

AP9971GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Full Isolation Package ID 23A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

 7.3. Size:169K  ape
 ap9971gd.pdf

AP9971GD RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low On-resistance BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 50m D1 PDIP-8 Package ID 5A G2 S2 PDIP-8 G1 S1 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device design, ul

 7.4. Size:97K  ape
 ap9971gh-hf ap9971gj-hf.pdf

AP9971GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G RoHS Compliant S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 7.5. Size:98K  ape
 ap9971gh ap9971gj.pdf

AP9971GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on

 7.6. Size:211K  ape
 ap9971gi.pdf

AP9971GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance D BVDSS 60V Simple Drive Requirement RDS(ON) 36m Full Isolation Package ID3 23A G RoHS Compliant S Description AP9971 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r

 7.7. Size:95K  ape
 ap9971gm-hf.pdf

AP9971GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Single Drive Requirement RDS(ON) 50m D1 Surface Mount Package ID 5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 D2 D1 Description Advanced Power MOSFETs from APEC provide the G2 G1 designer with the best c

 7.8. Size:198K  ape
 ap9971gp.pdf

AP9971GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Simple Drive Requirement RDS(ON) 36m Surface Mount Package ID 25A G RoHS Compliant & Halogen-Free S Description AP9971 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible o

 7.9. Size:906K  cn vbsemi
 ap9971gm.pdf

AP9971GM www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel

 7.10. Size:770K  cn vbsemi
 ap9971gh.pdf

AP9971GH www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note

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 ap9971gj.pdf

AP9971GJ www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 7.12. Size:1980K  cn vbsemi
 ap9971gi.pdf

AP9971GI www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

 7.13. Size:1134K  cn vbsemi
 ap9971gp.pdf

AP9971GP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire