AP9974BGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9974BGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 64 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de AP9974BGP MOSFET
- Selecciónⓘ de transistores por parámetros
AP9974BGP datasheet
..1. Size:93K ape
ap9974bgp.pdf 
AP9974BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resista
8.1. Size:100K ape
ap9974gh-hf ap9974gj-hf.pdf
AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi
8.2. Size:152K ape
ap9974gp.pdf
AP9974GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated de
8.3. Size:98K ape
ap9974gs p-hf.pdf
AP9974GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d
8.4. Size:76K ape
ap9974gs ap9974gp.pdf
AP9974GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi
8.5. Size:186K ape
ap9974agh.pdf
AP9974AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Surface Mount Package ID 68A G RoHS Compliant & Halogen-Free S Description AP9974A series are from Advanced Power innovated design and
8.6. Size:94K ape
ap9974agh-hf.pdf
AP9974AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Surface Mount Package ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, r
8.7. Size:96K ape
ap9974agp-hf.pdf
AP9974AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d
8.8. Size:93K ape
ap9974ags-hf.pdf
AP9974AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 60V D Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S
8.9. Size:234K ape
ap9974gh.pdf
AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated design and silicon G D S process technology to achieve the
8.10. Size:198K ape
ap9974gj.pdf
AP9974GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74A G RoHS Compliant & Halogen-Free S Description AP9974 series are from Advanced Power innovated design and silicon G D S process technology to achieve the
8.11. Size:1198K kexin
ap9974.pdf
SMD Type MOSFET N-Channel MOSFET AP9974 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) = 60V ID = 68 A (VGS = 10V) 0.127 +0.1 0.80-0.1 RDS(ON) 12m (VGS = 10V) max RDS(ON) 15m (VGS = 4.5V) Single Drive Requirement + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source D G S
8.12. Size:819K cn vbsemi
ap9974gs.pdf
AP9974GS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source
Otros transistores... AP9973GI, AP9973GJ-HF, AP9973GM, AP9973GP, AP9973GS, AP9974AGH-HF, AP9974AGP-HF, AP9974AGS-HF, IRF740, AP9974GH-HF, AP9974GJ-HF, AP9974GP-HF, AP9974GS-HF, AP9975GM-HF, AP9976GM, AP9976GP, AP9977AGH
