AP9974BGP Todos los transistores

 

AP9974BGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9974BGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: TO-220

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AP9974BGP Datasheet (PDF)

 ..1. Size:93K  ape
ap9974bgp.pdf

AP9974BGP
AP9974BGP

AP9974BGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resista

 8.1. Size:100K  ape
ap9974gh-hf ap9974gj-hf.pdf

AP9974BGP
AP9974BGP

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast swi

 8.2. Size:152K  ape
ap9974gp.pdf

AP9974BGP
AP9974BGP

AP9974GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated de

 8.3. Size:98K  ape
ap9974gs p-hf.pdf

AP9974BGP
AP9974BGP

AP9974GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

 8.4. Size:76K  ape
ap9974gs ap9974gp.pdf

AP9974BGP
AP9974BGP

AP9974GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device desi

 8.5. Size:186K  ape
ap9974agh.pdf

AP9974BGP
AP9974BGP

AP9974AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Surface Mount Package ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAP9974A series are from Advanced Power innovated design and

 8.6. Size:94K  ape
ap9974agh-hf.pdf

AP9974BGP
AP9974BGP

AP9974AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Surface Mount Package ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast switching,r

 8.7. Size:96K  ape
ap9974agp-hf.pdf

AP9974BGP
AP9974BGP

AP9974AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized d

 8.8. Size:93K  ape
ap9974ags-hf.pdf

AP9974BGP
AP9974BGP

AP9974AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS

 8.9. Size:234K  ape
ap9974gh.pdf

AP9974BGP
AP9974BGP

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

 8.10. Size:198K  ape
ap9974gj.pdf

AP9974BGP
AP9974BGP

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

 8.11. Size:1198K  kexin
ap9974.pdf

AP9974BGP
AP9974BGP

SMD Type MOSFETN-Channel MOSFETAP9974TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) = 60V ID = 68 A (VGS = 10V)0.127+0.10.80-0.1 RDS(ON) 12m (VGS = 10V) max RDS(ON) 15m (VGS = 4.5V) Single Drive Requirement+ 0.12.3 0.60- 0.11 Gate+0.154.60 -0.152 Drain3 SourceDGS

 8.12. Size:819K  cn vbsemi
ap9974gs.pdf

AP9974BGP
AP9974BGP

AP9974GSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

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