AP9980GJ Todos los transistores

 

AP9980GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9980GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 21.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

AP9980GJ Datasheet (PDF)

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 ap9980gj.pdf pdf_icon

AP9980GJ

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

 0.1. Size:100K  ape
 ap9980gh-hf ap9980gj-hf.pdf pdf_icon

AP9980GJ

AP9980GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-

 7.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GJ

AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe

 7.2. Size:209K  ape
 ap9980gm.pdf pdf_icon

AP9980GJ

AP9980GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 52mD1D1 Surface Mount Package ID 4.6AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMP1096UCB4 | SMOS44N80 | AM2336N-T1 | AUIRF7734M2 | G11 | CEF05N6

 

 
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