AP9992GP-HF Todos los transistores

 

AP9992GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9992GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 165 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 930 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220
 

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AP9992GP-HF Datasheet (PDF)

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AP9992GP-HF

AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit

 5.1. Size:55K  ape
ap9992gp-a-hf.pdf pdf_icon

AP9992GP-HF

AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 7.1. Size:132K  ape
ap9992gr-hf.pdf pdf_icon

AP9992GP-HF

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

 7.2. Size:56K  ape
ap9992gi-hf.pdf pdf_icon

AP9992GP-HF

AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

Otros transistores... AP9990GIF-HF , AP9990GMT-HF , AP9990GP-HF , AP9990GR-HF , AP9992AGI-HF , AP9992AGP-HF , AP9992GI-HF , AP9992GP-A-HF , 5N60 , AP9992GR-HF , AP9995GH-HF , AP9995GJ-HF , AP9997AGH-HF , AP9997BGH-HF , AP9997BGJ-HF , AP9997GH-HF , AP9997GJ-HF .

History: TSM301K12CQ | KI1400DL | RUH60120M | SI4825DY | ME15N25 | HTM150A02 | AP65SL190AP

 

 
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