AP9998GS-HF Todos los transistores

 

AP9998GS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9998GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263
 

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AP9998GS-HF Datasheet (PDF)

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AP9998GS-HF

AP9998GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized

 7.1. Size:58K  ape
ap9998gi-hf.pdf pdf_icon

AP9998GS-HF

AP9998GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionAP9998 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 7.2. Size:59K  ape
ap9998gh-hf.pdf pdf_icon

AP9998GS-HF

AP9998GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast sw

 9.1. Size:54K  ape
ap9995gh j-hf.pdf pdf_icon

AP9998GS-HF

AP9995GH/J-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Lower Gate Chage RDS(ON) 240m Fast Switching Characteristic ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the desi

Otros transistores... AP9997BGH-HF , AP9997BGJ-HF , AP9997GH-HF , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , AP9998GH-HF , AON7506 , AP99T03GP-HF , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ , AP9T16AGH-HF .

History: AO4498E | QM3009K | HTD060N03 | AP60T03AS | FQI47P06TU | DMG9N65CT | NCE65N460K

 

 
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