AP9998GS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9998GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET AP9998GS-HF

AP9998GS-HF Datasheet (PDF)

..1. Size:59K ape
ap9998gs-hf.pdf

AP9998GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized

7.1. Size:58K ape
ap9998gi-hf.pdf

AP9998GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionAP9998 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

7.2. Size:59K ape
ap9998gh-hf.pdf

AP9998GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast sw

9.1. Size:54K ape
ap9995gh j-hf.pdf

AP9995GH/J-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Lower Gate Chage RDS(ON) 240m Fast Switching Characteristic ID 7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the desi

9.2. Size:182K ape
ap9997gm.pdf

AP9997GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95VD2D2 Single Drive Requirement RDS(ON) 110mD1D1 Surface Mount Package ID 3AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,rugge

9.3. Size:55K ape
ap9990gi-hf.pdf

AP9990GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP9990 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

9.4. Size:97K ape
ap9997gh-hf ap9997gj-hf.pdf

AP9997GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast

9.5. Size:59K ape
ap9992gp-hf.pdf

AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit

9.6. Size:185K ape
ap9997agh.pdf

AP9997AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8AG RoHS Compliant & Halogen-FreeSDescriptionAP9997A series are from Advanced Power innovat

9.7. Size:56K ape
ap9994agp-hf.pdf

AP9994AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.6m Fast Switching Characteristic ID 190AG RoHS Compliant & Halogen-FreeSDescriptionAP9994 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

9.8. Size:58K ape
ap9990gh-hf.pdf

AP9990GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide theGdesigner wi

9.9. Size:95K ape
ap9990gmt-hf.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

9.10. Size:94K ape
ap9997gk-hf.pdf

AP9997GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120mS Fast Switching Characteristic ID 3.2AD Halogen Free & RoHS Compliant ProductSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

9.11. Size:132K ape
ap9992gr-hf.pdf

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

9.12. Size:123K ape
ap9997bghj-hf.pdf

AP9997BGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 145m Fast Switching Characteristic ID 9.3AG Halogen Free & RoHS Compliant ProductSDescriptionAP9997B series are from Advanced Power innovated design and siliconGDprocess technology to

9.13. Size:56K ape
ap9992gi-hf.pdf

AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

9.14. Size:130K ape
ap9992agp-hf.pdf

AP9992AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Lower Gate Charge ID 161AG RoHS Compliant & Halogen-FreeSDescriptionAP9992A series are from Advanced Power innovated design and siliconThe Advanced Power MOSFETs from APEC provide the

9.15. Size:55K ape
ap9992gp-a-hf.pdf

AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low

9.16. Size:312K ape
ap9990gmt-l.pdf

AP9990GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V 100% Rg & UIS Test RDS(ON) 5m Low On-resistance ID5 60AG RoHS Compliant & Halogen-FreeDSDDDDescriptionAP9990 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

9.17. Size:103K ape
ap9990gif-hf.pdf

AP9990GIF-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 55AG RoHS Compliant & Halogen-FreeTop ViewSDescriptionAdvanced Power MOSFETs from APEC provide the designerSchematic forwith the best combination of f

9.18. Size:233K ape
ap9992gr.pdf

9.19. Size:107K ape
ap9990gp-hf.pdf

AP9990GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner with

9.20. Size:151K ape
ap9990gmt.pdf

AP9990GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V SO-8 Compatible with Heatsink RDS(ON) 5m Low On-resistance ID 84AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP9990 series are from Advanced Power innovated design and Dsilicon process technology to achieve the

9.21. Size:94K ape
ap9997gk.pdf

AP9997GKRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and co

9.22. Size:92K ape
ap9992agi-hf.pdf

AP9992AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP9992A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

9.23. Size:93K ape
ap9997gp-hf.pdf

AP9997GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resista

9.24. Size:55K ape
ap9990gr-hf.pdf

AP9990GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 6m Fast Switching Characteristic ID 100AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

9.25. Size:56K ape
ap9994gp-hf.pdf

AP9994GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.95m Fast Switching Characteristic ID 215AG RoHS Compliant & Halogen-FreeSDescriptionAP9994 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

9.26. Size:94K ape
ap9997agh-hf.pdf

AP9997AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 120V Lower Gate Charge RDS(ON) 185m Fast Switching Characteristic ID 8.8AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S TO-252(H)r

9.27. Size:144K ape
ap9997gp.pdf

AP9997GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistan

9.28. Size:812K cn vbsemi
ap9997gk.pdf

AP9997GKwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABS

9.29. Size:1435K cn vbsemi
ap9997gh.pdf

AP9997GHwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

9.30. Size:286K inchange semiconductor
ap9997gh.pdf

isc N-Channel MOSFET Transistor AP9997GHFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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