AP99T03GP-HF Todos los transistores

 

AP99T03GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP99T03GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 1060 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO-220

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AP99T03GP-HF datasheet

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 ap99t03gp-hf.pdf pdf_icon

AP99T03GP-HF

AP99T03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

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 ap99t03gp.pdf pdf_icon

AP99T03GP-HF

AP99T03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve th

 6.1. Size:91K  ape
 ap99t03gs-hf.pdf pdf_icon

AP99T03GP-HF

AP99T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve the

 6.2. Size:206K  ape
 ap99t03gs.pdf pdf_icon

AP99T03GP-HF

AP99T03GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200A G RoHS Compliant & Halogen-Free S Description AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP9997BGJ-HF , AP9997GH-HF , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , AP9998GH-HF , AP9998GS-HF , AON6380 , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ , AP9T16AGH-HF , AP9T16GH .

History: VN67AD | VP0300M | BLM7002K | 2SK1647S | BLM2302 | WMK14N70C4 | VBZM8N50

 

 

 

 

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