AP99T06AGI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP99T06AGI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO-220CFM

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AP99T06AGI-HF datasheet

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 ap99t06agi-hf.pdf pdf_icon

AP99T06AGI-HF

AP99T06AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description AP99T06A series are from Advanced Power innovated design and silicon process technology to achieve the lowes

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 ap99t06agp-hf.pdf pdf_icon

AP99T06AGI-HF

AP99T06AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 7.1. Size:95K  ape
 ap99t06gp-hf.pdf pdf_icon

AP99T06AGI-HF

AP99T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 8.1. Size:94K  ape
 ap99t03gp-hf.pdf pdf_icon

AP99T06AGI-HF

AP99T03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

MOSTRAR MÁS

Otros transistores... AP9997GJ-HF, AP9997GK, AP9997GM, AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF, AP99T03GS-HF, CS150N03A8, AP99T06AGP-HF, AP99T06GP-HF, AP9T15GH, AP9T15GJ, AP9T16AGH-HF, AP9T16GH, AP9T16GJ, AP9T18GEH