AP99T06AGI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP99T06AGI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-220CFM

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AP99T06AGI-HF Datasheet (PDF)

..1. Size:59K ape
ap99t06agi-hf.pdf

AP99T06AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAP99T06A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

5.1. Size:94K ape
ap99t06agp-hf.pdf

AP99T06AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

7.1. Size:95K ape
ap99t06gp-hf.pdf

AP99T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

8.1. Size:94K ape
ap99t03gp-hf.pdf

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

8.2. Size:91K ape
ap99t03gs-hf.pdf

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve the

8.3. Size:206K ape
ap99t03gs.pdf

AP99T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

8.4. Size:195K ape
ap99t03gp.pdf

AP99T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID3 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated designand silicon process technology to achieve th

8.5. Size:91K ape
ap99t03gr-hf.pdf

AP99T03GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Ultra-low On-resistance RDS(ON) 2.5m Fast Switching Characteristic ID 200AG RoHS Compliant & Halogen-FreeSDescriptionAP99T03 series are from Advanced Power innovated design andsilicon process technology to achieve the

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