AP9T16GH Todos los transistores

 

AP9T16GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9T16GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

AP9T16GH Datasheet (PDF)

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 ap9t16gh ap9t16gj.pdf pdf_icon

AP9T16GH

AP9T16GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-252(H)Sruggedized device design, ultr

 8.1. Size:60K  ape
 ap9t16agh-hf.pdf pdf_icon

AP9T16GH

AP9T16AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas

 8.2. Size:186K  ape
 ap9t16agh.pdf pdf_icon

AP9T16GH

AP9T16AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP9T16A series are from Advanced Power inn

 9.1. Size:98K  ape
 ap9t18gh-hf.pdf pdf_icon

AP9T16GH

AP9T18GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38AG RoHS Compliant & Halogen-FreeSDescriptionAP9T18 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP99T03GP-HF , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ , AP9T16AGH-HF , P0903BDG , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , APA2N70K-HF , APS04N60H-HF .

History: IXTP50N28T | 3SK249

 

 
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