2SK3467 Todos los transistores

Introduzca al menos 3 números o letras

2SK3467 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3467

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 76 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 23 nS

Conductancia de drenaje-sustrato (Cd): 1200 pF

Resistencia drenaje-fuente RDS(on): 0.0048 Ohm

Empaquetado / Estuche: TO-220AB

Búsqueda de reemplazo de MOSFET 2SK3467

 

2SK3467 Datasheet (PDF)

1.1. 2sk3467.pdf Size:229K _renesas

2SK3467
2SK3467

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. 2sk3468-01.pdf Size:104K _update

2SK3467
2SK3467

2SK3468-01 FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles

4.2. 2sk3462.pdf Size:183K _toshiba

2SK3467
2SK3467

2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSV) 2SK3462 Switching Regulator, DC/DC Converter and Unit: mm Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 ? (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (V

4.3. 2sk3466.pdf Size:187K _toshiba

2SK3467
2SK3467

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3466 Chopper Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 ? (typ.) High forward transfer admittance: ?Yfs? = 4.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratin

4.4. 2sk3469-01mr.pdf Size:108K _fuji

2SK3467
2SK3467

2SK3469-01MR FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unle

Otros transistores... AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , APA2N70K-HF , APS04N60H-HF , IRF830I-HF , IRF840I , 2SK2545 , 2SK3505 , 2SK3451-01MR , 2SK3326 , 2SK4101LS , 2SK4212 , 2SK508 , 2SK940 , 2SK2648-01 .

 


2SK3467
  2SK3467
  2SK3467
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras