2SJ306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ306
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 25 W
Tensión drenaje-fuente (Vds): 250 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia drenaje-fuente RDS(on): 1.5 Ohm
Empaquetado / Estuche: TO-220ML
Búsqueda de reemplazo de MOSFET 2SJ306
2SJ306 Datasheet (PDF)
1.1. 2sj306.pdf 
Size:94K _sanyo
Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ306] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.1. 2sj302-z.pdf Size:442K _upd
5.2. 2sj304.pdf Size:379K _toshiba
2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode
5.3. 2sj305.pdf Size:335K _toshiba
2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications • High input impedance • Low gate threshold voltage.: V = -0.5~-1.5 V th • Excellent switching times.: t = 0.06 µs (typ.) on t = 0.15 µs (typ.) off • Low drain-source ON resistance: R = 2.4 ? (typ.) DS (ON) • Small package
5.4. 2sj307.pdf Size:115K _sanyo
Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ307] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.5. 2sj308.pdf Size:96K _sanyo
Ordering number:EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.6. 2sj302.pdf Size:440K _nec
5.7. 2sj303.pdf Size:435K _nec
5.8. 2sj302-zj.pdf Size:1885K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ302-ZJ ■ Features ● VDS (V) =-60V ● ID =-16 A ● RDS(ON) ＜ 100mΩ (VGS =-10V) ● RDS(ON) ＜ 240mΩ (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16 A Pulsed Drain Current (Note.1) IDM -64 Power Dissi
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