2SJ306 Todos los transistores

 

2SJ306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ306

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 110 pF

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: TO-220ML

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2SJ306 Datasheet (PDF)

1.1. 2sj306.pdf Size:94K _sanyo

2SJ306
2SJ306

Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ306] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.1. 2sj302-z.pdf Size:442K _upd

2SJ306
2SJ306



5.2. 2sj304.pdf Size:379K _toshiba

2SJ306
2SJ306

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode

 5.3. 2sj305.pdf Size:335K _toshiba

2SJ306
2SJ306

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications • High input impedance • Low gate threshold voltage.: V = -0.5~-1.5 V th • Excellent switching times.: t = 0.06 µs (typ.) on t = 0.15 µs (typ.) off • Low drain-source ON resistance: R = 2.4 ? (typ.) DS (ON) • Small package

5.4. 2sj307.pdf Size:115K _sanyo

2SJ306
2SJ306

Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ307] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 5.5. 2sj308.pdf Size:96K _sanyo

2SJ306
2SJ306

Ordering number:EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.6. 2sj302.pdf Size:440K _nec

2SJ306
2SJ306

5.7. 2sj303.pdf Size:435K _nec

2SJ306
2SJ306

5.8. 2sj302-zj.pdf Size:1885K _kexin

2SJ306
2SJ306

SMD Type MOSFET P-Channel MOSFET 2SJ302-ZJ ■ Features ● VDS (V) =-60V ● ID =-16 A ● RDS(ON) < 100mΩ (VGS =-10V) ● RDS(ON) < 240mΩ (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16 A Pulsed Drain Current (Note.1) IDM -64 Power Dissi

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