2SJ164 Todos los transistores

Silicon Junction FETs (Small Signal) 2SJ164 2SJ164 Silicon P-Channel Junction Unit mm For switching 4.0 0.2 Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1.27 1.27 1 Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 Gate Drain current ID 20 mA 3

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = -50 mA D Low on resistance R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Silicon Junction FETs (Small Signal) 2SJ163 2SJ163 Silicon P-Channel Junction Unit mm For general use switching +0.2 2.8 0.3 Complementary with 2SK1103 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2

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2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET ADE-208-1182 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diode

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.2 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.1 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage