2SK2352 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2352
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia entre drenaje y fuente RDS(on): 1 Ohm
Paquete / Cubierta: SC-67
Búsqueda de reemplazo de MOSFET 2SK2352
2SK2352 Datasheet (PDF)
2sk2352.pdf
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2sk2352.pdf
isc N-Channel MOSFET Transistor 2SK2352DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr
2sk2350.pdf
2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.26 (typ.) DS (ON) High forward transfer admittance : |Y | = 8 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhance
2sk2359 2sk2360.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2359/2SK2360SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications. 10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance42SK2359: RDS(o
2sk2357 2sk2358.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2357/2SK2358SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.4.5 0.210.0 0.33.2 0.2FEATURES2.7 0.2 Low On-Resistance2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID =
2sk2350.pdf
isc N-Channel MOSFET Transistor 2SK2350DESCRIPTIONDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV
2sk2351.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION Drain Current ID= 6A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
