2SK2655-01R Todos los transistores

 

2SK2655-01R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2655-01R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.48 Ohm
   Paquete / Cubierta: TO-3PF
 

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2SK2655-01R Datasheet (PDF)

 ..1. Size:291K  fuji
 2sk2655-01r.pdf pdf_icon

2SK2655-01R

N-channel MOS-FET2SK2655-01RFAP-IIS Series 900V 2 8A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

 8.1. Size:30K  panasonic
 2sk2659.pdf pdf_icon

2SK2655-01R

Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

 8.2. Size:304K  fuji
 2sk2653-01r.pdf pdf_icon

2SK2655-01R

N-channel MOS-FET2SK2653-01RFAP-IIS Series 900V 2,5 6A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

 8.3. Size:327K  fuji
 2sk2651-01mr.pdf pdf_icon

2SK2655-01R

N-channel MOS-FET2SK2651-01MRFAP-IIS Series 900V 2,5 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

MOSTRAR MÁS

Otros transistores... 2SJ598-Z , 2SJ557 , 2SK3876-01R , 2SK3025 , 2SK1217-01R , 2SK1375 , 2SK1904 , 2SK2352 , IRF3205 , 2SK2872-01MR , 2SK3430 , 2SK3430-S , 2SK3430-Z , 2SK3523-01R , 2SK3525-01MR , 2SK3637 , 2SK4096LS .

History: JMTL3400A | IRFW710A | IPP60R280P6 | FQA46N15 | IPZ60R040C7 | APQ02SN60AH | FDPF44N25T

 

 
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