3SK226 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3SK226
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 13.5 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: 2-3J1A

Búsqueda de reemplazo de MOSFET 3SK226

3SK226 Datasheet (PDF)

..1. Size:189K toshiba
3sk226.pdf

3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDra

9.1. Size:43K 1
3sk222.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK222RF AMPLIFIER FOR FM TUNER AND VHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good.(Unit: mm)CM = 92 dB TYP. @ f = 200 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)1.5+0.2 0.1

9.2. Size:43K 1
3sk223.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK223RF AMPLIFIER FOR CATV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. (Unit: mm)CM = 101 dB TYP. @ f = 470 MHz, GR = 30 dB2.8+0.2 0.3 Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)1.5+0.2 0.3NF2 = 0.9 dB TYP

9.3. Size:43K 1
3sk224.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK224RF AMPLIFIER FOR UHF TV TUNERN-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz)(Unit: mm) High Power Gain: GPS = 17 dB TYP. (f = 900 MHz)2.8+0.2 Suitable for use as RF amplifier in UHF TV tuner. 0.11.5+0.2 0.1 Auto

9.4. Size:177K toshiba
3sk225.pdf

3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications Unit: mmFM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 1

9.5. Size:30K panasonic
3sk227.pdf

High Frequency FETs 3SK2273SK227Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification+0.22.8 0.3+0.20.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF)0.5R4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertionby taping/magazine packing are available.3 2 Absolute Maximum Ratings (Ta = 25C)0.4 0.2Para

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