3SK260 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK260

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 13.5 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: 2-2K1B

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3SK260 datasheet

 ..1. Size:195K  toshiba
3sk260.pdf pdf_icon

3SK260

 9.1. Size:80K  sanyo
3sk265.pdf pdf_icon

3SK260

Ordering number ENN4902 N-Channel Silicon MOSFET 3SK265 VHF, CATV Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Easy AGC (Cut off at VG2S=0V). 2096A Small noise figure. [3SK265] High power gain. 1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.95 0.4 0.16 tuners. 4 3 0 to 0.1 1 2 0.6 0.95

 9.2. Size:82K  sanyo
3sk263.pdf pdf_icon

3SK260

Ordering number ENN4423A N-Channel Silicon MOSFET (Dual Gate) 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Small noise figure. 2096A Small cross modulation. [3SK263] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 Drain 2.9 2 Source 3 Gate 1 4 Gate 2 SANYO CP4 Spec

 9.3. Size:82K  sanyo
3sk264.pdf pdf_icon

3SK260

Ordering number ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions Enhancement type. unit mm Easy AGC (Cut off at VG2S=0V). 2096A Small noise figure. [3SK264] Excels in cross modulation characteristics. 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 Drain 2.9 2 Source 3 Gate

Otros transistores... 3SK225, 3SK226, 3SK232, 3SK249, 3SK256, 3SK257, 3SK258, 3SK259, 8205A, 3SK291, 3SK292, 3SK293, 3SK294, 3SK318, 3SK324, 2N2608, 2N2609