3SK260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications Unit: mmVHF RF Amplifier Applications High conversion gain: GCS = 24.5dB (typ.) Low noise figure: NF = 3.3dB (typ.) CSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13.5 VGate 1-source voltage VG1S

Ordering number:ENN4902N-Channel Silicon MOSFET3SK265VHF, CATV Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK265] High power gain.1.9 Ideally suited for RF amplifier of CATV wide-band 0.95 0.950.40.16tuners.4 30 to 0.11 20.60.95

Ordering number:ENN4423AN-Channel Silicon MOSFET (Dual Gate)3SK263FM Tuner, VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Small noise figure.2096A Small cross modulation.[3SK263]1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate 14 : Gate 2SANYO : CP4Spec

Ordering number:ENN4901N-Channel Silicon MOSFET3SK264VHF Tuner,High-Frequency Amplifier ApplicationsFeatures Package Dimensions Enhancement type.unit:mm Easy AGC (Cut off at VG2S=0V).2096A Small noise figure.[3SK264] Excels in cross modulation characteristics.1.90.95 0.950.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source3 : Gate

Ordering number : EN4423D3SK263N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=21dB,NF=1.1dB, CP4Features Enhancement type Small noise figure Small cross modulationSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Source Voltage VG1S 8 VGate2-to-Source Voltage VG2S 8

Ordering number : EN4901B3SK264N-Channnel Dual Gate MOSFEThttp://onsemi.com15V,30mA,PG=23dB,NF=1.1dB, CP4Features Enhancement type Easy AGC (Cut off at VG2S=0V) Small noise figure Excels in cross modulation characteristicsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDS 15 VGate1-to-Sour

High Frequency FETs 3SK2683SK268Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D

High Frequency FETs 3SK2693SK269Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification2.1 0.10.425 1.25 0.1 0.425 Features Low noise-figure (NF)32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertionby taping/magazine packing are available.41 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating Unit1 : D