2N2608 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2608

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.005 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-18 TO-206AA

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2N2608 datasheet

 ..1. Size:45K  microsemi
 2n2608.pdf pdf_icon

2N2608

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate

 9.1. Size:45K  microsemi
 2n2609.pdf pdf_icon

2N2608

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Dera

 9.2. Size:152K  microsemi
 2n2604ub.pdf pdf_icon

2N2608

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV

 9.3. Size:54K  microsemi
 2n2604 2n2605.pdf pdf_icon

2N2608

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250

MOSTRAR MÁS

Otros transistores... 3SK259, 3SK260, 3SK291, 3SK292, 3SK293, 3SK294, 3SK318, 3SK324, STP75NF75, 2N2609, 2N3684, 2N3685, 2N3686, 2N3687, 2N3796, 2N3797, 2N3820