2N2609 Todos los transistores

 

2N2609 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2609

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 6 V

Corriente continua de drenaje (Id): 0.01 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-18, TO-206AA

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2N2609 Datasheet (PDF)

1.1. 2n2609.pdf Size:45K _microsemi

2N2609

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Derate

5.1. 2n2604ub.pdf Size:152K _upd

2N2609
2N2609

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB JAN 2N2605 2N2605UB JANTX JANTXV

5.2. 2n2604 2n2605.pdf Size:54K _microsemi

2N2609
2N2609

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250C(1

 5.3. 2n2608.pdf Size:45K _microsemi

2N2609

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate lin

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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