2N5019
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5019
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 0.05
A
Tjⓘ - Temperatura máxima de unión: 200
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150
Ohm
Paquete / Cubierta:
TO-18
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2N5019
Datasheet (PDF)
..1. Size:263K linear-systems
2n5018 2n5019.pdf 
2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75 TO-18ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW@ 25 C (unless otherwise stated) Maximum Temperatures G 2 3 DStorage Temperature -55 to 200C Junction Operating Temperature -55 to 200C 1SMaximum Powe
9.1. Size:11K semelab
2n5015.pdf
2N5015Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 1000V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
9.2. Size:11K semelab
2n5013.pdf
2N5013Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 800V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.3. Size:15K semelab
2n5014.pdf
2N5014MECHANICAL DATADimensions in mm (inches)SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch-ing and linear applications in a hermetic TO39 package.
9.4. Size:11K semelab
2n5012.pdf
2N5012Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 700V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.5. Size:11K semelab
2n5011.pdf
2N5011Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 600V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.6. Size:84K semelab
2n5015x.pdf
2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305)8.51 (0.335)NPN TRANSISTOR6.10 (0.240)6.60 (0.260)0.89max.(0.035)38.00(1.5) FEATURES min. 0.41 (0.016)0.53 (0.021) SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGE 5.08 (0.20
9.7. Size:55K microsemi
2n5011s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
9.8. Size:55K microsemi
2n5014s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
9.9. Size:55K microsemi
2n5015sx.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
9.10. Size:55K microsemi
2n5013s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
9.11. Size:55K microsemi
2n5012s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
9.12. Size:55K microsemi
2n5010s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise note
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History: IRFU014PBF
