2N4118A Todos los transistores

 

2N4118A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4118A

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.3 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 3 V

Corriente continua de drenaje (Id): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-72

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2N4118A Datasheet (PDF)

1.1. 2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119.pdf Size:68K _vishay

2N4118A
2N4118A

2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 -0.6 to -1.8 -40 70 30 4118 -1 to -3 -40 80 80 4119 -2 to -6 -40 100 200 FEATURES BENEFITS APPLICATIONS D Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Volta

4.1. 2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf Size:21K _calogic

2N4118A

N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 2N4119 / 2N4117A 2N4119A PN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119 FEATURES PIN CONFIGURATION Low Leakage Low Capacitance ABSOLUTE MAXIMUM RATINGS TO-92 (T = 25oC unless otherwise noted) A TO-72 Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . .

 5.1. 2n411.pdf Size:129K _rca

2N4118A

5.2. 2n4114.pdf Size:12K _semelab

2N4118A

2N4114 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accor

 5.3. 2n4113.pdf Size:11K _semelab

2N4118A

2N4113 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accor

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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