PN4118 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PN4118
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 3 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 135 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: TO-92

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PN4118 Datasheet (PDF)

..1. Size:128K fairchild semi
pn4117 pn4118 pn4119 mmbf4117 mmbf4118 mmbf4119.pdf

PN4117 MMBF4117PN4118 MMBF4118PN4119 MMBF4119GSG TO-92SSOT-23 DDMark: 61A / 61C / 61ENOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low current DC and audio applications.These devices provide excellent performance as input stages forsub-picoamp instrumentation or any high impedance signalsources. Sourced from Process 53.Abso

..2. Size:21K calogic
2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf

N-Channel JFETGeneral Purpose AmplifierCORPORATION2N4117 2N4119 / 2N4117A 2N4119APN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119FEATURESPIN CONFIGURATION Low Leakage Low CapacitanceABSOLUTE MAXIMUM RATINGSTO-92(T = 25oC unless otherwise noted)ATO-72Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Curre

0.1. Size:68K vishay
2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119.pdf

2N/PN/SST4117A SeriesVishay SiliconixN-Channel JFETs2N4117A PN4117A SST41172N4118A PN4118A SST41182N4119A PN4119A SST4119PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)4117 -0.6 to -1.8 -40 70 304118 -1 to -3 -40 80 804119 -2 to -6 -40 100 200FEATURES BENEFITS APPLICATIONSD Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Vo

9.1. Size:25K fairchild semi
pn4117a.pdf

PN4117AN-Channel Switch This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from process 53.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Dra

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STB12NM50 | IRFSL33N15DPBF

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