2N4340 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N4340
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 3 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.3 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1500 Ohm
   Paquete / Cubierta: TO-18

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2N4340 Datasheet (PDF)

..1. Size:75K vishay
2n4338 2n4339 2n4340 2n4341.pdf

2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338

..2. Size:19K calogic
2n4338 2n4339 2n4340 2n4341.pdf

N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9.1. Size:304K general electric
2n433 2n434.pdf

9.2. Size:72K njs
2n4342 2n4343 2n4360.pdf

9.3. Size:197K comset
2n3442-2n4347.pdf

2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

9.4. Size:132K mospec
2n4347 2n3442.pdf

AAA

9.5. Size:105K no
2n4348.pdf

9.6. Size:183K inchange semiconductor
2n4347.pdf

isc Silicon NPN Power Transistor 2N4347DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for application in industrial and commercialequipment including high fidelity audio amplifier,seriesand shunt regulators and

9.7. Size:183K inchange semiconductor
2n4348.pdf

isc Silicon NPN Power Transistor 2N4348DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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